| 发明名称 |
Silicide gate level runners. |
| 摘要 |
Integrated circuits are fabricated with thick self-aligned silicide runners (17) on the field oxide (13) by etching back the first dielectric to expose patterned polysilicon on the field oxide and then forming a silicide on the patterned polysilicon.
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| 申请公布号 |
EP0423973(A2) |
申请公布日期 |
1991.04.24 |
| 申请号 |
EP19900310818 |
申请日期 |
1990.10.03 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
HILLENIUS, STEVEN JAMES;LEE, KUO-HUA;LU, CHIH-YUAN;SUNG, JANMYE |
| 分类号 |
H01L29/78;H01L21/28;H01L21/3205;H01L21/336;H01L21/768 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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