| 摘要 |
<p>PURPOSE:To reduce an ON resistance and to decrease power loss by employing an insulated gate type bipolar transistor as a switching element. CONSTITUTION:A voltage is applied to the gate terminal 15 of an insulated gate type bipolar transistor(IGBT), and an inversion layer is produced on the surface of a P-type base region 17 to conduct an emitter terminal 25 to an N-type region 22. Thus, an electrons 26 are injected from the terminal 25 to the region 22. Thus, holes 28 are injected from the P<+> type layer of a collector terminal 27 to achieve a conductivity modulation in the region 22, thereby obtaining an extremely low resistance. A solid-state relay which is operated in an AC manner can be realized by using a bidirectional switching element in which emitter electrodes 13-2, 14-2 and collector electrodes 13-3, 14-3 of two IGBTs, 13, 14 are connected reversely to each other.</p> |
