发明名称 SYSTEMS AND METHODS FOR CONTROLLING SOFT BIAS THICKNESS FOR TUNNEL MAGNETORESISTANCE READERS
摘要 Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjust to be below the free layer.
申请公布号 US2016284989(A1) 申请公布日期 2016.09.29
申请号 US201615179931 申请日期 2016.06.10
申请人 WESTERN DIGITAL (FREMONT), LLC 发明人 ZHENG YI;JIANG MING;ROY ANUP G.;LI GUANXIONG;MAO MING;MAURI DANIELE
分类号 H01L43/12;G01R33/09;H01L43/10;H01L43/02;H01L43/08 主分类号 H01L43/12
代理机构 代理人
主权项 1. A method for controlling a thickness of a soft bias layer during fabrication of a tunnel magnetoresistance reader, the method comprising: providing a magnetoresistive sensor stack comprising a free layer and a bottom shield layer; performing a contiguous junction milling on the sensor stack; depositing an insulating layer on the sensor stack; depositing a spacer layer on the insulating layer, wherein the spacer layer is entirely below the free layer; performing an angled milling sub-process to remove preselected portions of the spacer layer; depositing a soft bias layer on the sensor stack, wherein at least a portion of the soft bias layer is on the spacer layer; and depositing a top shield layer on the sensor stack and the soft bias layer.
地址 Fremont CA US