| 摘要 |
In an X-ROM, a metal modifiable GND line (3a) and a polysilicon modifiable GND line (3b) are produced to form a modifiable GND line (3), the arrangement being such that a metal modifiable GND line is formed respectively from the two sides of the fixed number of polysilicon modifiable GND lines according to a successive arrangement, the odd-numbered polysilicon modifiable GND lines are connected in common to a metal modifiable GND line by way of a designated polysilicon line (3c), the even-numbered polysilicon modifiable GND lines are connected in common to the other metal modifiable GND line by way of a designated polysilicon line, and each of the metal modifiable GND lines is connected to the GND terminal by way of transistors/ôcontrol cells (Qa, Qb). <IMAGE>
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