发明名称 Semiconductor integrated circuit device.
摘要 <p>In an active mode, a transistor 61 or 63 is turned on, so that a reference voltage generator circuit 1 and an internal voltage correcting circuit 2 are activated. Consequently, an internal voltage VINT which is stepped down is applied to an internal main circuit 7. Conversely, in a standby mode, a transistor 61 or 63 is turned off, so that the reference voltage generator circuit 1 and the internal voltage correcting circuit 2 are inactivated. Consequently, the current does not flow in the reference voltage generator circuit 1 and the internal voltage correcting circuit 2, resulting in reduction of a consumption power. Simultaneously, a transistor 62 or 64 is turned on, so that a source voltage Ext.Vcc is directly applied to the internal main circuit 7 through the transistor 62 or 23. Thereby, operation conditions of logic circuits in the internal main circuit 7 are maintained. &lt;IMAGE&gt;</p>
申请公布号 EP0461788(A2) 申请公布日期 1991.12.18
申请号 EP19910304973 申请日期 1991.05.31
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MURAKAMI, SHUJI;FUJISHIMA, KAZUYASU
分类号 G05F1/46;G11C11/417;G05F3/24;G11C5/14;G11C11/407 主分类号 G05F1/46
代理机构 代理人
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