Nanoscale metal oxide resistive switching element

摘要

A non-volatile memory device structure. The non-volatile memory device structure comprises a first electrode formed from a first metal material, a resistive switching element overlying the first electrode. The resistive switching element comprises a metal oxide material characterized by one or more oxygen deficient sites. The device includes a second electrode overlying the resistive switching layer, the second electrode being formed from a second metal material. The second electrode is made from a noble metal. The one or more oxygen deficient sites are caused to migrate from one of the first electrode or the second electrode towards the other electrode upon a voltage applied to the first electrode or the second electrode. The device can have a continuous change in resistance upon applying a continuous voltage ramp, suitable for an analog device. Alternatively, the device can have a sharp change in resistance upon applying the continuous voltage ramp, suitable for a digital device.

主权项

1. A switching device, comprising:
a first electrode, the first electrode including a first metal material; a resistive switching element overlying the first electrode, the resistive switching element comprising a metal oxide material characterized by a plurality of oxygen deficient sites; and a second electrode overlying the resistive switching element, the second electrode including a second metal material, wherein the first metal material and the second metal material do not appreciably react with the resistive switching element; wherein the plurality of oxygen deficient sites are caused to migrate within the resistive switching element towards the first electrode or the second electrode upon a positive voltage applied to the second electrode or the first electrode, respectively, wherein migration of the plurality of oxygen deficient sites is characterized by a continuous change of conductance of the resistive switching element with a continuous change in magnitude of the positive voltage applied, and wherein the continuous change of conductance of the resistive switching element provides for an analog memory device.