| 摘要 |
The semiconductor is mfd. by forming a first gate oxide layer (1) on the silicon substrate layer (2), forming a first polysilicon layer (3) on the layer (2), wholly thermal-growing a silicon oxide layer (4), etching the layer (4) except the layer (3), wholly chemical depositing an oxide layer (5), reactive ion etching the layer (5), leaving a silicon oxide layer (5'), and forming a second gate oxide layer and a second polysilicon layer (6). The semiconductor is useful for the mfr. of a high integrated IC.
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