Integrated circuit configuration for field effect transistors.

摘要

An arrangement is disclosed for interconnecting individual field-effect transistors (FETs) in integrated circuits (ICs), in order to provide the effect of a larger, composite transistor. The individual FETs are positioned symmetrically about centroids, which are themselves distributed symmetrically over the IC. This allows individual digital transistors to be connected effectively into a larger, composite, analog transistor, while compensating for dopant gradients in the integrated circuit substrate. The described embodiment operates as a differential amplifier.