| 摘要 |
A process for dynamically adjusting the concentration of one or more reactants in a plasma assisted process, such as a plasma etch process or a plasma deposition process, is described. The concentration of one or more reactants, as well as the concentration of a non-reactive gas, in a plasma enhanced process for the formation of an integrated circuit structure is quantitatively monitored by actinometry to derive a ratio of such concentrations of reactant to non-reactant. The concentration of the reactant or reactants in the plasma processing chamber is then maintained in the chamber by adjusting the flow of such reactant or reactants into the chamber based on changes in such ratio based on such continuous quantitative monitoring of the both the concentration of the reactant or reactants and that of the non-reactive (non-changing concentration) component.
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