发明名称 |
Material-saving process for fabricating mixed crystals |
摘要 |
Disclosed is a process for fabricating mixed crystals and, in particular, III-V semiconductors, in which at least one component of the composition of the mixed crystal is transferred in a reactor from a source into a vapor phase containing hydrogen and chloride compounds as well as a carrier gas and mixed with said component or other components of said composition of said mixed crystal, transported to a substrate and precipitated on said substrate. The invented process is distinguished in that in order to vary the growth rate between approximately 1 <m/h and approximately 500 <m/h, the overall pressure is varied between approximately 80 mbar and approximately 1 mbar.
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申请公布号 |
US5348911(A) |
申请公布日期 |
1994.09.20 |
申请号 |
US19930051792 |
申请日期 |
1993.04.26 |
申请人 |
AIXTRON GMBH |
发明人 |
JUERGENSEN, HOLGER;GRUETER, KLAUS;DESCHLER, MARC;BALK, PIETER |
分类号 |
B01D7/02;C23C16/44;C23C16/455;C30B25/02;(IPC1-7):H01L21/205 |
主分类号 |
B01D7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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