Semiconductor device and manufacturing method thereof

摘要

A semiconductor device having excellent electric characteristics and a method for manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and removing an exposed portion of the hydrogen capture film to form a channel protective film formed of the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided.

主权项

1. A semiconductor device comprising:
a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a channel protective film having a hydrogen permeable property over the oxide semiconductor film; a film having a hydrogen capture property in contact with a part of the channel protective film, a part of the oxide semiconductor film, and a part of the gate insulating film; and a source electrode and a drain electrode over and in direct contact with an upper surface of the film having a hydrogen capture property.