| 发明名称 |
Method of operating a nonvolatile semiconductor memory device |
| 摘要 |
In this invention, charges are extracted from the charge storage portion by means of F-N tunnel current, and then avalanche hot carriers are injected into the storage portion.
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| 申请公布号 |
US5452248(A) |
申请公布日期 |
1995.09.19 |
| 申请号 |
US19920903949 |
申请日期 |
1992.06.26 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NARUKE, KIYOMI;SUZUKI, TOMOKO;YAMADA, SEIJI;OBI, ETSUSHI;OSHIKIRI, MASAMITSU |
| 分类号 |
G11C16/16;G11C16/34;H01L27/115;H01L29/788;(IPC1-7):G11C16/02 |
主分类号 |
G11C16/16 |
| 代理机构 |
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