DRAM USING A BIT LINE CONTACT OR CAPACITOR CONTACT

摘要

The method for fabricating the DRAM comprises the steps of forming a gate insulation layer and a field insulation layer on the silicon substrate and forming a gate electrode thereon; forming a mask pattern by spreading a positive photoresist layer thereon; etching the first polysilicon layer by using the mask pattern and laying a second polysilicon layer thereon; forming a plug contact hole for a bit line and a capacitor by etching the first plane insulation layer and the first insulation layer; forming a sensitive film pad pattern; forming a sensitive contact pattern for the bit line by using the positive photoresist layer for the bit line; forming a polysilicon bit line contact mask of the spacer shape; and forming the bit line with the bit line contact; forming a sensitive contact pattern of the capacitor contact; and forming a capacitor contact.