发明名称 (A) ;OHMIC ELECTRODE OF N-TYPE CUBIC BORON NITRIDE SEMICONDUCTOR AND ITS FORMATION
摘要 PURPOSE:To obtain an org. nonlinear optical material having high harmonic generating capacity by providing the structure of a 5-membered benzohetero ring obtd. by condensing a 5-membered ring contg. a specified hetero atom with a benzene ring having an electron attractive substituent bonded to the ring. CONSTITUTION:The structure of a 5-membered benzohetero ring obtd. by condensing a 5-membered ring contg. at least one hetero atom selected among N, O and S with a benzene ring having an electron withdrawing substituent bonded to the ring is provided to a nonlinear optical material. The resulting nonlinear optical material has high second harmonic generating (SHG) and third harmonic generating (THG) capacities and a significant nonlinear optical effect. A material having especially high SHG capacity and high phase matching capacity can be utilized as a material for a wavelength converting device or a parametric oscillator.
申请公布号 JPH07122724(B2) 申请公布日期 1995.12.25
申请号 JP19870006070 申请日期 1987.01.16
申请人 发明人
分类号 G02F1/35;G02F1/355;G02F1/361;(IPC1-7):G02F1/35 主分类号 G02F1/35
代理机构 代理人
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