发明名称 Semiconductor memory device
摘要 <p>After performing high speed sensing with shutting off digit line pair, in which digit line is connected to an objective memory cell for access, only the digit line which is connected to the memory cell is electrically connected to the sense amplifier to perform re-writing of information to the memory cell by the corresponding sense amplifier. In subsequent balancing and pre-charging process, pre-charging is performed after sufficient balance of potential is established in the digit line pairs. By this, no extra charging current will flow in the digit line and/or the pre-charging power source to reduce power consumption. &lt;IMAGE&gt;</p>
申请公布号 EP0703585(A2) 申请公布日期 1996.03.27
申请号 EP19950113174 申请日期 1995.08.22
申请人 NEC CORPORATION 发明人 TAKAI, YASUHIRO
分类号 G11C11/409;G11C11/403;G11C11/406;G11C11/4091;(IPC1-7):G11C11/406;G11C7/00 主分类号 G11C11/409
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