SEMICONDUCTOR METAL WIRE FORMING METHOD

摘要

forming a contact hole(11) to be connected with a junction part(2) formed on a silicon substrate(1) by patterning an oxide film(3) on the silicon substrate(1)to deposit the first or the forth metal thin film(4 or 7) on the oxide film(3) and the contact hole(11); removing the first or the forth metal thin film(4 or 7) on top of the oxide film and the contact hole(3,11); depositing the fifth or the seventh metal thin film(8 or 10) on top of the oxide film and the contact hole(3,11) in sequence; and removing the fifth or the seventh metal thin film(8 or 10) except the part where a metal wire is formed.