发明名称 Apparatus for forming film
摘要 This invention relates to film-forming apparatus for forming an insulating film, for example, by the CVD method using an activated reaction gas. It is aimed at simplifying the apparatus, ensuring high film quality, enhancing the efficiency of formation of a plasma, and improving the uniformity of thickness of the produced film. The film-forming apparatus includes a plasma generator and a first gas discharger for discharging a first reaction gas into the plasma generator and a second gas discharger for discharging a second reaction gas onto a substrate. The second gas discharger includes a plurality of gas discharge pipes, in each of which a plurality of gas discharge holes are formed, whereby the second reaction gas is discharged from the gas discharge holes into contact with the activated first reaction gas and is itself activated so that a film is formed on the substrate through reaction of first and second reaction gases.
申请公布号 US5620523(A) 申请公布日期 1997.04.15
申请号 US19950389791 申请日期 1995.02.16
申请人 CANON SALES CO., INC.;ALCAN-TECH CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. 发明人 MAEDA, KAZUO;OHIRA, KOUICHI;NISHIMOTO, YUHKO
分类号 H01J37/32;(IPC1-7):C23C16/00 主分类号 H01J37/32
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