发明名称 |
Semiconductor device with contact hole |
摘要 |
In a manufacturing method of a semiconductor device, a gate insulating film is grown in an active region. Thereafter, an N-type polysilicon film is formed on the gate insulating film and is patterned so that a gate electrode and a polysilicon electrode are formed. Next, arsenic ions are implanted onto entire faces of the gate and polysilicon electrodes so that a source-drain region is formed on a substrate. An interlayer insulating film is then formed on an entire face of the source-drain region, etc. Thereafter, a contact hole is formed on a drain region in a position in which the drain region partially overlaps the polysilicon electrode. A surface portion of the polysilicon electrode is exposed into the contact hole. Thereafter, phosphoric ions are implanted through the contact hole with the interlayer insulating film as a mask. The implanted ions are thermally processed to activate these implanted ions. Thereafter, metal wiring is formed. Thus, resistance of a common contact having s three-dimensional structure is reduced.
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申请公布号 |
US5656841(A) |
申请公布日期 |
1997.08.12 |
申请号 |
US19950545398 |
申请日期 |
1995.10.19 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
WATANABE, HIROFUMI;ISSHIKI, KAIHEI;TANIGAWA, TETSUROU;SHINDOU, YASUYUKI;HANAOKA, KATSUNARI |
分类号 |
H01L23/522;H01L21/768;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L27/11 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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