| 摘要 |
A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, <IMAGE> Formula (I) wherein R1 is hydrogen atom or methyl group, R2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03</=n/(m+n)</=1, (b) a compound capable of generating an acid when irradiated with light, and (c) a nitrogen-containing compound, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000</=Mw</=50,000, 1.10</=Mw/Mn</=2.50 (Mw and Mn respectively represent value converted in styrene).
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| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NIKI, HIROKAZU;WAKABAYASHI, HIROMITSU;HAYASE, RUMIKO;OYASATO, NAOHIKO;ONISHI, YASUNOBU;SATO, KAZUO;CHIBA, KENJI;HAYASHI, TAKAO |
