发明名称 |
Reliability of metal leads in high speed LSI semiconductors using dummy vias |
摘要 |
A semiconductor device (and method of manufacturing thereof) having metal leads (114+130) with improved reliability, comprising metal leads (114+130) on a substrate 112, a low-dielectric constant material (116) at least between the metal leads (114+130), and dummy vias (122+134) in contact with the metal leads (114+130). Heat from the metal leads (114+130) is transferable to the dummy vias (122+134), and the dummy vias (122+134) are capable of conducting away the heat. The low-dielectric constant material (116) may have a dielectric constant of less than about 3.5. An advantage of the invention is to improve reliability of metal leads in circuits using low-dielectric constant materials, especially in scaled-down circuits that are compact in the horizontal direction.
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申请公布号 |
US5675187(A) |
申请公布日期 |
1997.10.07 |
申请号 |
US19960648740 |
申请日期 |
1996.05.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
NUMATA, KEN;HOUSTON, KAY L. |
分类号 |
H01G4/08;H01G4/18;H01L21/3205;H01L23/367;H01L23/52;H01L23/522;(IPC1-7):H01L23/58;H01L23/48 |
主分类号 |
H01G4/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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