| 发明名称 |
Capacitor and method of manufacturing the same |
| 摘要 |
A structure of a capacitor includes a first metal interconnection layer, a dielectric film, and a second metal interconnection layer. The dielectric film is formed on the first metal interconnection layer. The second metal interconnection layer is formed on the dielectric film. The dielectric film is a dielectric film formed by bias-ECR plasma CVD.
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| 申请公布号 |
US5674771(A) |
申请公布日期 |
1997.10.07 |
| 申请号 |
US19930034906 |
申请日期 |
1993.03.22 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
MACHIDA, KATSUYUKI;IMAI, KAZUO;YOSHINO, HIDEO;OZAKI, YOSHIHARU;MIURA, KENJI |
| 分类号 |
H01L21/02;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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