发明名称 |
Assisted switching circuit using transistor, thyristor or MOSFET |
摘要 |
The assisted switching circuit operates with the opening and closing of a semiconductor device (11) used as a switch with a reactive load (4'). A low voltage signal generator (9) is provided to operate when the space separating the load electrode (11a) and a common electrode (11c) of the semiconductor (11) is entering into conduction mode. The low voltage signal generator operates to apply to this space a current signal which is in phase with the cut current. The effect of this is to ensure that when the current values are added together point by point the areas of loss normally associated with a semiconductor switch are suppressed. This action occurs both during the opening of the switch, and also during the closing of the switch. The signal generator is supplied autonomously from the supply terminals (8a, 8b).
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申请公布号 |
FR2763762(A1) |
申请公布日期 |
1998.11.27 |
申请号 |
FR19970006130 |
申请日期 |
1997.05.21 |
申请人 |
H.B INDUSTRIES |
发明人 |
COURIER DE MERE HENRI EDOUARD FRANCOIS MARIE |
分类号 |
H02M7/5383;H03K17/0814;(IPC1-7):H02M1/16 |
主分类号 |
H02M7/5383 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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