发明名称 |
Method for vapor phase wafer cleaning |
摘要 |
A controlled amount of gaseous nitrogen (12) is passed over a heated azeotropic solution of hydrogen fluoride and water (16) and producing an hydrogen fluoride vapor. The hydrogen fluoride vapor is combined with gaseous hydrogen chloride (14) and then the wafers (20) are exposed to the combined vapor at low pressure and room temperature.
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申请公布号 |
US5880031(A) |
申请公布日期 |
1999.03.09 |
申请号 |
US19920904419 |
申请日期 |
1992.06.25 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WONG, MAN |
分类号 |
H01L21/306;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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