Semiconductor memory device and method of manufacturing the same

摘要

In a semiconductor memory device having cylindrical capacitors, word lines and a bit line are formed on a semiconductor substrate. A cylindrical storage node is connected to a conductive layer. The cylindrical storage node is provided at its inner wall with protruded conductive conductors which protrudes in a radially inward direction of the cylindrical storage node. A surface of the cylindrical storage node is covered with a capacitor insulating film. The outer surface of the cylindrical storage node is covered with a cell plate with the capacitor insulating film therebetween.