Semiconductor device, especially MOS transistor for DRAM

摘要

In a semiconductor device having a nitrided silicon oxide layer between a silicon substrate and a gate electrode, nitrogen atoms are distributed only in the region of the interface between the substrate and the layer and are combined with two silicon atoms and one oxygen atom or with three silicon atoms Independent claims are also included for: (i) the production of a semiconductor device comprising forming a silicon oxide layer on a silicon substrate by oxidation in a steam atmosphere, forming a nitrided silicon oxide layer by holding the silicon oxide layer in a dinitrogen oxide atmosphere at 800-900 deg C for 5-60 minutes, and then forming a gate electrode; and (ii) a similar process in which the nitrided silicon oxide layer is formed by holding the silicon oxide layer in a nitrogen oxide atmosphere at 800-900 deg C for 5-60 minutes.