发明名称 Voltage booster with reduced Vpp current and self-timed control loop without pulse generator
摘要 An n-channel bus switch has a transistor gate boosted above the power supply (Vcc) to increase current drive and reduce the channel resistance of the bus switch. No pulse generator is needed. The gate terminal is connected to a boosted node. When the bus switch is turned on, a pullup transistor drives the boosted node from ground to Vcc. The pulse generator is eliminated by using a Schmidt-trigger to sense the voltage of the boosted node. Once the Schmidt-trigger senses that the voltage of the boosted node is near Vcc, the pull-up is turned off. A delay line first drives the gate of the pullup transistor to a threshold below Vcc using an n-channel pullup, and then drives the gate to Vpp using a p-channel pullup. A delay line then drives the back-side of a capacitor from ground to Vcc. This voltage swing is coupled through the capacitor to the boosted node, driving the boosted node about 1.3 volts above Vcc. A small keeper transistor supplies a small current to the boosted node to counteract any leakage. Vpp current drain is reduced by using multiple stages to turn the pullup off.
申请公布号 US5946204(A) 申请公布日期 1999.08.31
申请号 US19980197322 申请日期 1998.11.19
申请人 PERICOM SEMICONDUCTOR CORP. 发明人 WONG, ANTHONY YAP
分类号 H02M3/18;(IPC1-7):H02M3/18;H02K5/13 主分类号 H02M3/18
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