| 摘要 |
In a semiconductor integrated circuit device in which metal assist wires (2) such as aluminum assist wires for operating word lines (1) at high speed are disposed in parallel to the word lines, the metal assist wires (2) are disposed so as to extend to and terminate on halfway positions toward both ends of the word lines (1), and signal/power source lines (10, 11) are formed of the same metal wiring layer as that of the metal assist wires in parallel to digit lines (4) in an area locating from the end portions of the metal assist wires to the end portions of the word lines.
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