| 摘要 |
PROBLEM TO BE SOLVED: To implement a semiconductor device and its testing method capable of detecting minute leakage current at a test of leakage current detection in a semiconductor device with a constant-current generating circuit. SOLUTION: Wiring 15 to transmit reference voltage VSS constantly, and wiring 13 capable of selectively transmitting the same voltage level as that of the reverence voltage VSS and the same voltage level as that of power supply voltage VDD, are provided. The gate electrode of the transistor 5 of a current mirror circuit constituting a constant-current generating circuit, and the other electrode connected to the gate electrode to be supplied with the reference voltage VSS, are connected to the wiring 13, and the same voltage level as that of the power supply voltage VDD is transmitted to the wiring 13 at the time of a test of leakage current detection.
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