发明名称 |
SUBSTRATE HEAT TREATMENT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To allow an even process with a simple device configuration. SOLUTION: Provided at about the same level as a substrate W, a photo- absorptive plate-like member 40 almost entirely covers the internal horizontal cross-section of a chamber 10 except for a release-hole 40a at the substrate position. The plate-like member 40 is heated together with the substrate W for heat radiation. The heat radiation heats a dinitrogen monoxide gas on upper-stream side US of a gas stream GS to promote its decomposition, resulting in an equilibrium state when passing the substrate W. The plate-like member 40 also provides a rectification function for the gas stream GS as well, for even substrate treatment.
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申请公布号 |
JP2000058533(A) |
申请公布日期 |
2000.02.25 |
申请号 |
JP19980227117 |
申请日期 |
1998.08.11 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
KONDO YASUAKI;CHIBA TAKATOSHI;NISHIHARA HIDEO |
分类号 |
H01L21/31;H01L21/26;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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