发明名称 SUBSTRATE HEAT TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To allow an even process with a simple device configuration. SOLUTION: Provided at about the same level as a substrate W, a photo- absorptive plate-like member 40 almost entirely covers the internal horizontal cross-section of a chamber 10 except for a release-hole 40a at the substrate position. The plate-like member 40 is heated together with the substrate W for heat radiation. The heat radiation heats a dinitrogen monoxide gas on upper-stream side US of a gas stream GS to promote its decomposition, resulting in an equilibrium state when passing the substrate W. The plate-like member 40 also provides a rectification function for the gas stream GS as well, for even substrate treatment.
申请公布号 JP2000058533(A) 申请公布日期 2000.02.25
申请号 JP19980227117 申请日期 1998.08.11
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KONDO YASUAKI;CHIBA TAKATOSHI;NISHIHARA HIDEO
分类号 H01L21/31;H01L21/26;(IPC1-7):H01L21/31 主分类号 H01L21/31
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