| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film transistor semiconductor film composed of polycrystalline silicon formed by crystallization of microcrystalline silicon. SOLUTION: A method which forms a polycrystalline silicon film from a microcrystal silicon film includes a step of depositing a microcrystalline silicon film 14 including microcrystallites buried in amorphous substance, a step of annealing the deposited film 14 and, at least, partially forming a polycrystalline film, and a step of promoting formation of uniform crystal particles 28, 30 having comparatively large size by allowing the amorphous substance to contain buried seed crystals 16.
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