发明名称 GATE-CONTROLLED ELECTRON EMITTER USING INJECTION PARTICLE FOR RESTRICTING GATE OPENING AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A fabricating method of a gate-controlled electron emitter is provided to make particles restrict a gate opening through a gate layer and form a dielectric opening through an insulating layer through the opening. CONSTITUTION: The method comprises the steps of injecting many particles into a structure, utilizing the particles for restricting a corresponding position for many gate openings extended through an electrical conductive gate layer supplied around an electrical insulating layer in the structure, supplying a spacer material into the gate opening to leave a corresponding aperture extended downwardly toward the insulating layer through a spacer material although generally covering a side end thereof, etching the insulating layer through the aperture to form a dielectric opening, and injecting an electrical conductive emitter material into the dielectric opening to form an electron emitting device.
申请公布号 KR20000016555(A) 申请公布日期 2000.03.25
申请号 KR19987010145 申请日期 1998.12.07
申请人 CANDESCENT TECHNOLOGIES CORPORATION 发明人 LUDWIG, PAUL, N.;HAVEN, DUANE, A.;MACAULAY, JOHN, M.;SPINDT, CHRISTOPHER, J.;CLEEVES, JAMES, M.;KNALL, N., JOHAN
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址