发明名称 ELECTRON BEAN LITHOGRAPHY SYSTEM
摘要 PROBLEM TO BE SOLVED: To reduce overheads and realize high-speed responses and low cost by obtaining third position information and drafting information, related to and based on second target position information, and third coefficient information from a coefficient processing part, and inputting in parallel the second target position information into a first auxiliary deflection commanding part and into the coefficient processing part. SOLUTION: A main deflection control part 1, in charge of main deflection processing, is connected directly with hot lines to auxiliary deflection processing parts 7 to 9 of a control part 26, in charge of auxiliary deflection processing and of coefficient generating/processing (for sub-auxiliary deflection processing). A control part 27, in charge of sub-auxiliary deflection processing requiring high-speed/high responsiveness, comprises a sub-auxiliary deflection absolute construction (correction) processing part 10 and a high-speed follow-up construction processing part 11, and coefficient information outputted from the processing part 7 is inputted directly into the two processing parts 10, 11, which perform deflection calculation and high- speed correction from the amount of deflection for sub-auxiliary deflection and the amount of high-speed follow-up deflection directly obtained from a deflection-amount input/calculation processing part 12 and output the amount of deflection corrected. A coefficient matrix corresponds to the coefficient information obtained from the processing part 7.
申请公布号 JP2000100363(A) 申请公布日期 2000.04.07
申请号 JP19980264308 申请日期 1998.09.18
申请人 HITACHI LTD 发明人 KAMETANI MASATSUGU;YAMAMOTO KENJIRO;YODA HARUO;ANDO MASAAKI;KAWANO MASAMICHI
分类号 H01J37/20;H01J37/147;(IPC1-7):H01J37/147 主分类号 H01J37/20
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