Forming load resistors for static random access memory cells by depositing a refractory oxide onto an insulator and converting to a resistance element using a two-step hydrogen process

摘要

A load resistor is formed by depositing an insulating layer (307) on a substrate (300) with an opening in the insulating layer exposing a conductive area on the substrate. A refractory metal oxide layer (309) is then deposited onto the insulating layer, filling the opening. A two step hydrogen treatment then converts the metal oxide layer into a conductor with a low resistance (309c,d,e,f,g,h), a conductor with a high resistance (309a,b) and an insulator (309i,j,k).