| 摘要 |
PROBLEM TO BE SOLVED: To provide a good in-plane evenness in a pattern dimension of a chrome mask by using a square or trapezoidal wave AC instead of sine wave AC as a current flowing a magnetic field generating coil for stronger magnetic field, and raising the magnitude of the resultant magnetic field vector at four corner parts for slower etching. SOLUTION: An RF electrode surface 10 provided in an etching chamber 2 is provided with a photo-mask substrate 11 which is covered with a pattern material, over which a photo-resist with a pattern formed is provided, the magnetic field generating coil of two pairs of electromagnets 5, 6, 7, and 8 is applied with a square wave current or trapezoidal current with phase deviated by 90 deg.C, the resultant magnetic field is rotated in the plane parallel to a substrate, and the pattern material is etched by reactive ion etching. The magnitude of the resultant vector is larger compared to the case of sine wave. Here, the current is deformed so that the rotary magnetic field intensity is enhanced at four corner parts, for suppressing the rise of etching speed, resulting in good in-plane evenness of pattern dimension.
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