| 摘要 |
PROBLEM TO BE SOLVED: To raise breakdown strength and to reduce on-resistance. SOLUTION: This semiconductor device comprises a source region 4, channel region 8, and drain region 5, and a gate electrode 7 is formed on the channel region 8 while a drift region 22, which is at least shallow under the gate electrode 7 (first drift region 22A) but deep near the drain region 5 (second drift region 22B), is comprised between the channel region 6 and the drain region 5.
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