| 摘要 |
PROBLEM TO BE SOLVED: To suppress restrict frequency of wet cleaning and aim to make compatible the maintenance of treatment (processing) quality and restriction in reducing apparatus working ratio by a method, wherein in a semiconductor manufacturing apparatus for plasma cleaning and a wet cleaning, the plasma cleaning is sufficiently and effectively conducted. SOLUTION: In a semiconductor manufacturing apparatus, a pair of electrodes 2, 3 are provided in a reaction chamber 1, and high frequency is applied on one electrode 2, and the other electrode 3 is set as a grounding potential, whereby a specified process is performed for a wafer W on the electrode 2. In this case, there are provided a ground line 7 for setting the reaction chamber 1 as the grounding potential, and ground switching means 10 for switching a grounding so that the reaction chamber 1 is set as the grounding potential, without setting the other electrode 3 as the grounding potential.
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