发明名称 High capacity dimm memory with data and state memory
摘要 <p>A dual in-line memory module (DIMM) including a circuit board and a plurality of semiconductor memory chips mounted on the circuit board, the memory chips providing 128 Megabytes of data storage on the DIMM. The memory chips are logically organized into first and second memory bank portions which are separately addressable. The first memory bank portion is logically organized into memory blocks for storing data, and the second memory bank portion is configured to store directory information for the memory blocks of the first memory bank portion.</p>
申请公布号 EP1020864(A1) 申请公布日期 2000.07.19
申请号 EP20000107135 申请日期 1996.05.14
申请人 SILICON GRAPHICS, INC. 发明人 LAUDON, JAMES PIERCE;LENOSKI, DANIEL EDWARD;MANTON, JOHN
分类号 G11C7/00;G11C5/00;G11C5/02;G11C11/00;G11C11/401;(IPC1-7):G11C5/00 主分类号 G11C7/00
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