Non-planar III-N transistor

摘要

Transistors for high voltage and high frequency operation. A non-planar, polar crystalline semiconductor body having a top surface disposed between first and second opposite sidewalls includes a channel region with a first crystalline semiconductor layer disposed over the first and second sidewalls. The first crystalline semiconductor layer is to provide a two dimensional electron gas (2DEG) within the channel region. A gate structure is disposed over the first crystalline semiconductor layer along at least the second sidewall to modulate the 2DEG. First and second sidewalls of the non-planar polar crystalline semiconductor body may have differing polarity, with the channel proximate to a first of the sidewalls. The gate structure may be along a second of the sidewalls to gate a back barrier. The polar crystalline semiconductor body may be a group III-nitride formed on a silicon substrate with the (1010) plane on a (110) plane of the silicon.

主权项

1. A high electron mobility transistor (HEMT), comprising:
a non-planar, polar crystalline semiconductor body on a substrate, the non-planar polar crystalline semiconductor body having a top surface disposed between first and second opposite sidewalls; a first crystalline semiconductor layer disposed over the first and second sidewalls; a source and drain region at opposite ends of the non-planar, polar crystalline semiconductor body with a channel region disposed therebetween; and a gate structure disposed over the first crystalline semiconductor layer along at least the second sidewall wherein current flow through the channel region is in a direction parallel to the substrate.