METALLIZATION PROCESS FOR SEMICONDUCTOR DEVICE USING PVD METHOD

摘要

PURPOSE: A forming method is to improve electric conductivity, electromigration and stress-migration so as to provide a stable PVD(physical vapor deposition) metal interconnect of a semiconductor device, thereby increasing reliability of the device. CONSTITUTION: The first and second interlayer dielectrics with etching selectivity are successively formed on a lower layer formed on a semiconductor substrate(10). The second and first interlayer dielectrics are successively selective-etched to form a recess in a metal interconnect forming region to form an undercut portion under the second interlayer dielectric. A metal layer is deposited on the entire structure using a collimated PVD process. An anti-oxidative layer(15) for metal layer is formed on the entire structure using an MOCVD process. The anti-oxidative layer and the metal layer outside the recess are removed by an etch-back process, leaving the anti-oxidative layer on the metal layer inside the recess.