| 摘要 |
PURPOSE: A plasma etcher for manufacturing a semiconductor is provided to prevent a wafer from being contaminated by particles by controlling generation of particles, and improve yield of a wafer etching process by extending a cleaning period of particles. CONSTITUTION: A process chamber injection hole(11) is formed in one side of a chamber(100), and an exhaust hole(12) is formed in the other side of the chamber. The upper portion of the chamber is composed of a quartz material. An electrostatic chuck(13) is installed in the lower portion of the inside of the chamber, and a wafer(14) is located in the electrostatic chuck. Radio frequency(RF) power is applied to the electrostatic chuck. A coil(15) surround the outside of the upper portion of the chamber. RF power is applied to the chamber to generate plasma inside the chamber.
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