METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve reliability, by using a stacked structure of a SrRuO3 layer and a Pt layer as a capacitor lower electrode of a ferroelectric random access memory (FeRAM) device and a dynamic random access memory(DRAM) device. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21) having a predetermined lower structure. A predetermined region of the interlayer dielectric is etched to form a contact hole exposing a predetermined region of the semiconductor substrate. A polysilicon layer(23) is buried in the contact hole. After a SrRuO3 layer(24) and a Pt layer(25) are stacked on the entire structure, and patterned to form a lower electrode. A dielectric layer(26) and an upper electrode(27) are formed on the entire structure.