FORMULATIONS TO SELECTIVELY ETCH SILICON AND GERMANIUM

摘要

Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

主权项

1. A method of selectively removing silicon-containing material from the surface of a microelectronic device relative to germanium-containing material, said method comprising contacting a silicon selective composition with the surface of the microelectronic device for time and temperature necessary to selectively remove silicon-containing material relative to germanium-containing material, wherein the silicon selective composition comprises at least one diol compound, at least one fluoride species, and at least one oxidizing species.