| 发明名称 |
HETERO-BIPOLAR TRANSISTOR |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a hetero-bipolar transistor which never deteriorates the current amplification factor when the doping concentration of a sub-collector layer is set at a high level. SOLUTION: An InGaP layer 3 is inserted between a sub-collector layer 2 and a collector layer 4.
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| 申请公布号 |
JP2002026031(A) |
申请公布日期 |
2002.01.25 |
| 申请号 |
JP20000205469 |
申请日期 |
2000.07.06 |
| 申请人 |
HITACHI CABLE LTD |
发明人 |
MEGURO TAKESHI;IGARASHI JUNICHI |
| 分类号 |
H01L29/73;H01L21/331;H01L29/205;(IPC1-7):H01L21/331 |
主分类号 |
H01L29/73 |
| 代理机构 |
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