发明名称 Semiconductor apparatus and a manufacturing method thereof
摘要 A manufacturing method makes it possible to produce a semiconductor apparatus which is outstanding in mounting reliability at a high manufacturing yield rate. A semiconductor apparatus, in which, on the surface of a semiconductor chip with a circuit and an electrode formed thereon, a stress cushioning layer is provided, except for a part where the electrode is, has a wiring layer connected to the electrode on the stress cushioning layer, an external protection film on the wiring layer and stress cushioning layer, a window where a part of the wiring layer is exposed at a predetermined location of the external protection film, and an external electrode which is electrically connected to the wiring layer via the window. The stress cushioning layer, wiring layer, conductor, external protection film, and external electrode are formed on the inside of the end of the semiconductor chip.
申请公布号 US6348741(B1) 申请公布日期 2002.02.19
申请号 US20000675011 申请日期 2000.09.29
申请人 HITACHI, LTD. 发明人 OGINO MASAHIKO;MIWA TAKAO;SATOH TOSHIYA;NAGAI AKIRA;SEGAWA TADANORI;YAGUCHI AKIHIRO;ANJO ICHIRO;NISHIMURA ASAO;UENO TAKUMI
分类号 H01L23/12;H01L21/301;H01L23/29;H01L23/31;H01L23/485;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/12
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