| 摘要 |
The main purpose of the invention is to provide a method for fabricating a semiconductor device having trench isolations which is improved so that the transistors can be operated normally. A resist pattern having openings for forming trenches for trench isolations in the upper part of a mark region is formed on a semiconductor wafer. By using the resist pattern as a mask, the surface of the semiconductor wafer is etched and trenches for trench isolations are formed. After removing the resist pattern an oxide film is formed on the semiconductor wafer so as to fill into the trenches for trench isolations. The oxide film is polished through chemical and mechanical polishing and, thereby, trench isolations are formed.
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