| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve an operation characteristic and a reliability by equally forming a silicide layer on source/drain regions and a gate electrode. CONSTITUTION: An HLD(High temperature Low pressure Deposition) layer and a nitride are sequentially formed on a semiconductor substrate(11). Nitride spacers(22) are formed on both sidewalls of a gate electrode(19) and the HLD layer(15) is selectively exposed by etching the nitride using the HLD layer(15) as an etch stopper at the same time. After forming source/drain regions(24) by implanting doped dopants and annealing, HLD patterns(16) are formed on both sidewalls of the gate electrode(19) by completely removing the exposed HLD layer(15). At this time, the HLD layer(15) is used as a buffer when implanting doped dopants and simultaneously used to prevent a formation of a thermal oxide on the source/drain regions(24) and the gate electrode(19) at the thermal treatment, thereby forming an equal silicide layer in following process.
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