Semiconductor device having a conductive layer side surface slope which is at least 90° and method for manufacturing the same

摘要

A semiconductor device having a conductive layer side surface slope of at least 90 and a method for making the same is provided. An interlayer dielectric film and a conductive layer are formed on a semiconductor substrate. The interlayer dielectric film has a side surface slope defining a hole of less than 90 . A conductive layer having a side surface slope of at least 90 is formed in the hole defined by the interlayer dielectric film. The semiconductor device is manufactured by coating a preliminary film on a semiconductor substrate. Patterning the preliminary film forms a preliminary film pattern having a side surface slope of 90 . The interlayer dielectric film is formed on the semiconductor substrate and the preliminary film pattern. Removing some of the interlayer dielectric film exposes an upper surface of the preliminary film pattern. Removing the preliminary film pattern forms an interlayer dielectric film pattern having a side surface slope of no more than 90 and defining a hole. Forming a conductive material in the hole forms a conductive layer having a side surface slope of at least 90