发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To suppress reduction of reliability of holding stored information caused by a coupling noise in a DRAM. SOLUTION: During driving a word line 41c being a specified word line, one end of word lines 41b, 41d being adjacent word lines are made continuity to ground by inverters 32, 34, this word lines 41b, 41d are made continuity to ground from a different position from the ground continuity part by the inverters 32, 34 by MOS type transistors 13a, 13b.
申请公布号 JP2002269984(A) 申请公布日期 2002.09.20
申请号 JP20010073826 申请日期 2001.03.15
申请人 SONY CORP 发明人 SATO KAZUHIRO
分类号 G11C11/407;G11C11/401;(IPC1-7):G11C11/407 主分类号 G11C11/407
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