发明名称 |
Method to deposit a seeding layer for electroless copper plating |
摘要 |
A method of for electroless copper deposition using a Pd/Pd acetate seeding layer formed in using only two components (Pd acetate and solvent) to form an interconnect for a semiconductor device. The invention has two preferred embodiments. The first embodiment forms a Key seed layer composed of Pd/Pd acetate by a spin-on or dip process for the electroless plating of a Cu plug. The second embodiment forms a Pd passivation cap layer over the Cu plug to prevent the Cu plug from oxidizing.
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申请公布号 |
US6495200(B1) |
申请公布日期 |
2002.12.17 |
申请号 |
US19980206733 |
申请日期 |
1998.12.07 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD.;NAT UNIV SINGAPORE |
发明人 |
CHAN LAP;LI FONG YAU;NG HOU TEE |
分类号 |
C23C18/16;H01L21/288;H01L21/768;(IPC1-7):B05D5/12;H01L21/476 |
主分类号 |
C23C18/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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