发明名称 Method to deposit a seeding layer for electroless copper plating
摘要 A method of for electroless copper deposition using a Pd/Pd acetate seeding layer formed in using only two components (Pd acetate and solvent) to form an interconnect for a semiconductor device. The invention has two preferred embodiments. The first embodiment forms a Key seed layer composed of Pd/Pd acetate by a spin-on or dip process for the electroless plating of a Cu plug. The second embodiment forms a Pd passivation cap layer over the Cu plug to prevent the Cu plug from oxidizing.
申请公布号 US6495200(B1) 申请公布日期 2002.12.17
申请号 US19980206733 申请日期 1998.12.07
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD.;NAT UNIV SINGAPORE 发明人 CHAN LAP;LI FONG YAU;NG HOU TEE
分类号 C23C18/16;H01L21/288;H01L21/768;(IPC1-7):B05D5/12;H01L21/476 主分类号 C23C18/16
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