| 摘要 |
PROBLEM TO BE SOLVED: To easily form an electrode for anode connection in a method for manufacturing a semiconductor pressure sensor obtained by forming a diaphragm for pressure detection on an SOI(silicone-on-insulator) substrate and anode connecting this SOI substrate to a glass pedestal. SOLUTION: A gage diffusion resistance 3 and a circuit element 4 are formed on a first silicon substrate 11, a recess part is formed on a second silicon substrate 12 for forming the diaphragm 1, and an exposure part 15 where the second silicon substrate 12 is exposed is formed by grinding at the outer periphery part of an element and diaphragm forming area on the SOI substrate 10. Via this exposure part 15, voltage is applied between the second silicone substrate 12 and the pedestal 20 to anode connect both of them.
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